TY - GEN
T1 - Ultrahigh-Q silicon-on-insulator one dimensional mode-gap nanocavity
AU - Kuramochi, Eiichi
AU - Tanabe, Takasumi
AU - Taniyama, Hideaki
AU - Kawasaki, Kohei
AU - Notomi, Masaya
PY - 2010/1/1
Y1 - 2010/1/1
N2 - We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.
AB - We reveal that a Si-wire-compatible SOI one-dimensional photonic crystal nanocavity can have a numerical Q as high as 108 with a modal volume of less than 1 (λ/n)3. An experimental Q of 360,000 is observed.
UR - http://www.scopus.com/inward/record.url?scp=85086494102&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85086494102&partnerID=8YFLogxK
U2 - 10.1364/cleo.2010.cwb2
DO - 10.1364/cleo.2010.cwb2
M3 - Conference contribution
AN - SCOPUS:85086494102
SN - 9781557528896
T3 - Optics InfoBase Conference Papers
BT - Conference on Lasers and Electro-Optics, CLEO 2010
PB - Optical Society of America (OSA)
T2 - Conference on Lasers and Electro-Optics, CLEO 2010
Y2 - 16 May 2010 through 21 May 2010
ER -