Understanding of short-channel mobility in Tri-Gate nanowire MOSFETs and enhanced stress memorization technique for performance improvement

Masumi Saitoh, Yukio Nakabayashi, Kensuke Ota, Ken Uchida, Toshinori Numata

    研究成果: Conference contribution

    13 被引用数 (Scopus)

    抄録

    We systematically studied short-channel mobility (μ) in SOI nanowire transistors (NW Tr.). The strain induced in the NW channel dominates short-L μ. μ of short-L 〈110〉 NW nFETs largely increases due to vertical compressive strain. We achieved further strain enhancement in NW channel by stress memorization technique (SMT). μ increase by SMT is much larger in NW Tr. than in planar Tr. In 〈110〉 NW nFETs, Ion on the same DIBL increases by as much as 58% by SMT thanks to significant RSD reduction in addition to μ increase, while Ion degradation of pFETs is minimal.

    本文言語English
    ホスト出版物のタイトル2010 IEEE International Electron Devices Meeting, IEDM 2010
    ページ34.3.1-34.3.4
    DOI
    出版ステータスPublished - 2010 12月 1
    イベント2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
    継続期間: 2010 12月 62010 12月 8

    出版物シリーズ

    名前Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(印刷版)0163-1918

    Other

    Other2010 IEEE International Electron Devices Meeting, IEDM 2010
    国/地域United States
    CitySan Francisco, CA
    Period10/12/610/12/8

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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