Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

    研究成果: Conference contribution

    9 被引用数 (Scopus)

    抄録

    We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.

    本文言語English
    ホスト出版物のタイトル2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
    ページ19.5.1-19.5.4
    DOI
    出版ステータスPublished - 2009 12月 1
    イベント2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
    継続期間: 2009 12月 72009 12月 9

    出版物シリーズ

    名前Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(印刷版)0163-1918

    Other

    Other2009 International Electron Devices Meeting, IEDM 2009
    国/地域United States
    CityBaltimore, MD
    Period09/12/709/12/9

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

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