Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport

Masumi Saitoh, Nobuaki Yasutake, Yukio Nakabayashi, Ken Uchida, Toshinori Numata

研究成果: Conference contribution

9 引用 (Scopus)

抜粋

We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (μ) enhancement (Δμ/ μ) but also by the modulation of saturation velocity (vsat). It is found that v sat increases more by strain in smaller-Δμ/ μ devices. The difference of Δ μ/ μ is compensated by vsat change. As a result, Δv/v of (100)/(110) n/pFETs converge in sub-30nm regime. The superiority of (110) CMOS to (100) CMOS is maintained in terms of both Idlin and Idsat at highly-strained conditions.

元の言語English
ホスト出版物のタイトル2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
ページ19.5.1-19.5.4
DOI
出版物ステータスPublished - 2009 12 1
イベント2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
継続期間: 2009 12 72009 12 9

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷物)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
United States
Baltimore, MD
期間09/12/709/12/9

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Saitoh, M., Yasutake, N., Nakabayashi, Y., Uchida, K., & Numata, T. (2009). Understanding of strain effects on high-field carrier velocity in (100) and (110) CMOSFETs under quasi-ballistic transport. : 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 19.5.1-19.5.4). [5424318] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424318