Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors

Takamitsu Ishihara, Ken Uchida, Junji Koga, Shin Ichi Takagi

    研究成果: Article

    15 引用 (Scopus)

    抜粋

    A unified model of roughness scattering in single-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is proposed based on a formulation suitable for perturbation theory. This unified model includes the roughness scattering model both in bulk MOSFETs and in thin SOI MOSFETs. The SOI-thickness-fluctuation-induced scattering component is naturally derived from the proposed roughness scattering model. The experimentally observed dependence of inversion layer mobility on SOI thickness in thin SOI MOSFETs is explained well by the proposed roughness scattering model.

    元の言語English
    ページ(範囲)3125-3132
    ページ数8
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    45
    発行部数4 B
    DOI
    出版物ステータスPublished - 2006 4 25

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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