Unified roughness scattering model incorporating scattering component induced by thickness fluctuations in silicon-on-insulator metal-oxide- semiconductor field-effect transistors

Takamitsu Ishihara, Ken Uchida, Junji Koga, Shin Ichi Takagi

研究成果: Article査読

15 被引用数 (Scopus)

抄録

A unified model of roughness scattering in single-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is proposed based on a formulation suitable for perturbation theory. This unified model includes the roughness scattering model both in bulk MOSFETs and in thin SOI MOSFETs. The SOI-thickness-fluctuation-induced scattering component is naturally derived from the proposed roughness scattering model. The experimentally observed dependence of inversion layer mobility on SOI thickness in thin SOI MOSFETs is explained well by the proposed roughness scattering model.

本文言語English
ページ(範囲)3125-3132
ページ数8
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
4 B
DOI
出版ステータスPublished - 2006 4月 25
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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