A unified model of roughness scattering in single-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors is proposed based on a formulation suitable for perturbation theory. This unified model includes the roughness scattering model both in bulk MOSFETs and in thin SOI MOSFETs. The SOI-thickness-fluctuation-induced scattering component is naturally derived from the proposed roughness scattering model. The experimentally observed dependence of inversion layer mobility on SOI thickness in thin SOI MOSFETs is explained well by the proposed roughness scattering model.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2006 4月 25|
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