Unified simulation of Schottky and Ohmic contacts

Kazuya Matsuzawa, Ken Uchida, Akira Nishiyama

    研究成果: Article査読

    77 被引用数 (Scopus)

    抄録

    The Schottky contact is an important consideration in the development of semiconductor devices. This paper shows that a practical Schottky contact model is available for a unified device simulation of Schottky and ohmic contacts. The present model includes the thermionic emission at the metal/semiconductor interface and the spatially distributed tunneling calculated at each grid of semiconductor around the interface. Simulation results of rectifying characteristics of Schottky barrier diodes (SBD's) and contact resistances under high impurity concentration conditions are reasonable, compared with measurements. As examples of application to actual devices, the influence of the contact resistance on salicided MOSFET's with source/drain extension and the immunity of Schottky barrier tunnel transistors (SBTT's) from the short-channel effect (SCE) are demonstrated.

    本文言語English
    ページ(範囲)103-108
    ページ数6
    ジャーナルIEEE Transactions on Electron Devices
    47
    1
    DOI
    出版ステータスPublished - 2000 1 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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