Unified simulation of Schottky and Ohmic contacts

Kazuya Matsuzawa, Ken Uchida, Akira Nishiyama

研究成果: Article査読

81 被引用数 (Scopus)

抄録

The Schottky contact is an important consideration in the development of semiconductor devices. This paper shows that a practical Schottky contact model is available for a unified device simulation of Schottky and ohmic contacts. The present model includes the thermionic emission at the metal/semiconductor interface and the spatially distributed tunneling calculated at each grid of semiconductor around the interface. Simulation results of rectifying characteristics of Schottky barrier diodes (SBD's) and contact resistances under high impurity concentration conditions are reasonable, compared with measurements. As examples of application to actual devices, the influence of the contact resistance on salicided MOSFET's with source/drain extension and the immunity of Schottky barrier tunnel transistors (SBTT's) from the short-channel effect (SCE) are demonstrated.

本文言語English
ページ(範囲)103-108
ページ数6
ジャーナルIEEE Transactions on Electron Devices
47
1
DOI
出版ステータスPublished - 2000 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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