Upper limit of two-dimensional hole gas mobility in Ge/SiGe heterostructures

Takahisa Tanaka, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki, Kohei M. Itoh

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Here we report experimental and theoretical investigations of two-dimensional hole gas (2DHG) mobility in Ge/SiGe heterostructures and deduce the theoretical limit of 2DHG mobility as a function of the strain in Ge. 2DHG mobility was experimentally obtained by mobility spectrum analysis in the temperature range of 5-290 K. Based on the subband structure described with use of a six-band kp method 2DHG mobility was calculated. Each contribution of scattering mechanism was determined from the Dingle ratio obtained from Shubnikov-de Haas oscillations. From the comparison between the experimental and calculated 2DHG mobility, we show that the interface roughness scattering is dominant scattering mechanism below 200K and 2DHG mobility can be increased to more than 5000 cm2/Vs at room temperature if the interface roughness is removed and the 2DHG concentration is controlled appropriately.

本文言語English
ホスト出版物のタイトル2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
ページ40-41
ページ数2
DOI
出版ステータスPublished - 2012 7 30
イベント6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
継続期間: 2012 6 42012 6 6

出版物シリーズ

名前2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
国/地域United States
CityBerkeley, CA
Period12/6/412/6/6

ASJC Scopus subject areas

  • 電子工学および電気工学

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