Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate

S. Matsuo; K. Tateno; T. Nakahara; H. Tsuda; T. Kurokawa

doi:10.1049/el:19970752

Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate

S. Matsuo, K. Tateno, T. Nakahara, H. Tsuda, T. Kurokawa

研究成果: Article › 査読

30 被引用数 (Scopus)

抄録

The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.

本文言語	English
ページ（範囲）	1148-1149
ページ数	2
ジャーナル	Electronics Letters
巻	33
号	13
DOI	https://doi.org/10.1049/el:19970752
出版ステータス	Published - 1997 6月 19
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

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10.1049/el:19970752

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AU - Kurokawa, T.

PY - 1997/6/19

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Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate

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