抜粋
The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1148-1149 |
| ページ数 | 2 |
| ジャーナル | Electronics Letters |
| 巻 | 33 |
| 発行部数 | 13 |
| DOI | |
| 出版物ステータス | Published - 1997 6 19 |
| 外部発表 | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
フィンガープリント Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Matsuo, S., Tateno, K., Nakahara, T., Tsuda, H., & Kurokawa, T. (1997). Use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on a silicon substrate. Electronics Letters, 33(13), 1148-1149. https://doi.org/10.1049/el:19970752