抄録
The use of polyimide bonding for hybrid integration of a vertical cavity surface emitting laser on an Si substrate was demonstrated. The threshold current was 3.1mA and the maximum output power was 2.45mW for a 15μm diameter mesa. This technology is suitable for integrating photonic devices with an Si-LSI circuit.
本文言語 | English |
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ページ(範囲) | 1148-1149 |
ページ数 | 2 |
ジャーナル | Electronics Letters |
巻 | 33 |
号 | 13 |
DOI | |
出版ステータス | Published - 1997 6月 19 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学