Variable threshold-voltage CMOS technology

Tadahiro Kuroda, Tetsuya Fujita, Fumitoshi Hatcri, Takayasu Sakurai

    研究成果: Article査読

    18 被引用数 (Scopus)

    抄録

    This paper describes a Variable Threshold-voltage CMOS technology (VTCMOS) which controls the threshold voltage (VTH) by means of substrate bias control. Circuit techniques to combine a switch circuit for an active mode and a pump circuit for a standby mode are presented. Design considerations, such as latch-up immunity and upper limit of reverse substrate bias, are discussed. Experimental results obtained from chips fabricated in a 0.3 μm VTCMOS technology are reported. VTH controllability including temperature dependence and influence on short channel effect, power penalty caused by the control circuit, substrate current dependence at low VTH, and substrate noise influence on circuit performance are investigated. A scaling theory is also presented for use in the discussion of future possibilities and problems involved in this technology.

    本文言語English
    ページ(範囲)1705-1714
    ページ数10
    ジャーナルIEICE Transactions on Electronics
    E83-C
    11
    出版ステータスPublished - 2000 1 1

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 電子工学および電気工学

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