Vertically integrated computer-aided design for device processing

Toshiaki Makabe, Kazunobu Maeshige

研究成果: Article

21 引用 (Scopus)

抄録

The status of a series of numerical modelings of plasma etching processes is overviewed. Almost all models of low-temperature plasma, which were proposed in the mid- and late 1980s, are summarized, together with the boundary conditions that plasma processing faces. Physical, chemical and electrical linkage among modules describing low-temperature plasma structure/function in a reactor, the profile and local charging evolution in a hole/trench and electrical device damage during etching will make it possible to prepare a technology computer-aided design (CAD) for the practical purpose of prediction and designing the etching process. This system will also help to determine device arrangement and size in ultra-large-scale integrated (ULSI) circuits in a closed integration system. Our basis for this study is the vertically integrated CAD for device processing (VicAddress), which the authors recently proposed. VicAddress will also provide a tool for discussing the etching processes between process engineers and device designers in the age of nanometer-scale device technology.

元の言語English
ページ(範囲)176-200
ページ数25
ジャーナルApplied Surface Science
192
発行部数1-4
DOI
出版物ステータスPublished - 2002 5 30

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computer aided design
Etching
Computer aided design
Processing
Plasmas
Plasma applications
Plasma etching
etching
cold plasmas
Integrated circuits
Boundary conditions
Engineers
Temperature
systems integration
plasma etching
linkages
engineers
integrated circuits
charging
modules

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

これを引用

Vertically integrated computer-aided design for device processing. / Makabe, Toshiaki; Maeshige, Kazunobu.

:: Applied Surface Science, 巻 192, 番号 1-4, 30.05.2002, p. 176-200.

研究成果: Article

Makabe, Toshiaki ; Maeshige, Kazunobu. / Vertically integrated computer-aided design for device processing. :: Applied Surface Science. 2002 ; 巻 192, 番号 1-4. pp. 176-200.
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