What is the origin of activation energy in phase-change film?

Junji Tominaga, Takayuku Shima, Paul Fons, Robert Simpson, Masashi Kuwahara, Alexander Kolobov

研究成果: Article査読

46 被引用数 (Scopus)

抄録

Activation energy is one of the basic parameters used to estimate the physical and chemical features of optical and electrical phase-change (PC) films. However, its origin has not been discussed well because of insufficient understanding of the amorphous structures. In this paper, we reveal the origin of the activation energy using a GeSbTe-superlattice model and ab-initio local density approximation (LDA) calculations. The simulated energy required for transition from amorphous to crystal formation in a 9-atomic system was 2.34 eV; This is in good agreement with experimentally reported values.

本文言語English
論文番号03A053
ジャーナルJapanese journal of applied physics
48
3 PART 2
DOI
出版ステータスPublished - 2009 3月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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