The process time for semiconductor fabrication has a great influence on both the gas phase and the material surface. We have to consider two specific phenomena when we simulate, predict or design a plasma process for materials. One is the temporal change in the plasma structure and function through the change in feed gas molecules, and the other is the temporal change in surface morphology. On the other hand, the plasma surface process is a competition among etching, deposition and charging caused by active ions and neutral radicals incident on the surface. We show and discuss the present stage of the database in the gas phase and on the surface phase of plasma etching employed in semiconductor manufacturing.
ASJC Scopus subject areas