X-ray absorption spectroscopy of high-k gate dielectric insulating layers for next-generation semiconductor devices as measured by superconducting detectors

M. Ohkubo, P. Fons, A. Kushino, Y. E. Chen, M. Ukibe, Y. Kitajima

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Fluorescent-yield X-ray absorption spectroscopy (XAS) taken with a superconducting tunnel junction (STJ) detector has been employed to study the oxygen K-edge structure of Hf-Al oxide gate insulators for next-generation metal-oxide-semiconductor (MOS) devices. Thermal stability is a critical issue in the MOS fabrication processes. We show that O K-edge XAS indicates that no change in the electronic band structure occurs due to thermal annealing.

本文言語English
ページ(範囲)731-733
ページ数3
ジャーナルNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
559
2
DOI
出版ステータスPublished - 2006 4 14
外部発表はい

ASJC Scopus subject areas

  • 核物理学および高エネルギー物理学
  • 器械工学

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